2sd2114k / 2SD2144S transistors high-current gain medium power transistor (20v, 0.5a) 2sd2114k / 2SD2144S z features 1) high dc current gain. h fe = 1200 (typ.) 2) high emitter-base voltage. v ebo =12v (min.) 3) low v ce (sat). v ce (sat) = 0.18v (typ.) (i c / i b = 500ma / 20ma) z structure epitaxial planar type npn silicon transistor z external dimensions (units : mm) 2SD2144S 2sd2114k (1) emitter (2) collector (3) base rohm : spt eiaj : sc-72 0 0.1 2.8 0.2 1.6 0.3 0.6 1.1 0.8 0.1 0.15 0.4 2.9 0.2 1.9 0.2 0.95 0.95 + 0.2 ? 0.1 ? 0.1 + 0.2 + 0.1 ? 0.06 + 0.1 ? 0.05 (2) (1) (3) (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 abbreviated symbol: bb ? all terminals have same dimensions ? denotes h fe 3 0.2 (15min.) 4 0.2 2 0.2 0.45 0.5 0.45 5 (1) (2) (3) ? 0.05 + 0.15 + 0.15 ? 0.05 2.5 + 0.4 ? 0.1 3min. z absolute maximum ratings (ta=25 c) parameter v cbo v ceo v ebo i c p c tj tstg 25 v v v a(dc) w c c 20 12 0.5 a(pulse) 1 ? 0.2 0.3 150 ? 55 + 150 symbol limits unit ? single pulse pw = 100ms 2sd2114k 2SD2144S collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature
2sd2114k / 2SD2144S transistors z electrical characteristics (ta=25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) f t ? cob min. 25 20 12 ? ? 560 ? ? ? ? ? ? ? ? ? 0.18 350 8.0 ? ? ? 0.5 0.5 2700 0.4 ? ? vi c = 10 a i c = 1ma i e = 10 a v cb = 20v v eb = 10v i c /i b = 500ma/20ma v ce = 10v, i e =? 50ma, f = 100mhz v cb = 10v, i e = 0a, f = 1mhz v v a a ? h fe 820 2SD2144S 2sd2114k ? 2700 v ce = 3v, i c = 10ma ? v mhz pf ron ? 0.8 ? i b = 1ma, vi = 100mv(rms), f = 1khz pf typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance output on-resistance ? measured using pulse current z packaging specifications and h fe package code t146 tp 3000 5000 ? ? taping basic ordering unit (pieces) vw h fe uvw 2sd2114k 2SD2144S type h fe values are classified as follows : item u h fe 560 1200 v 820 1800 w 1200 2700 z electrical characteristic curves 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 ta = 25?c 0.2 a 0.4 a 0.6 a 0.8 a 1.0 a 1.2 a 1.4 a 1.6 a i b = 0 1.8 a 2.0 a collector current : i c (ma) collector to emitter voltage : v ce (v) fig.1 grounded emitter output characteristics( ) 0 200 400 600 800 1000 0246810 ta = 25 c measured using pulse current. 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma 2.0ma i b = 0ma collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics( ? ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 2 5 10 20 50 100 200 500 1000 collector current : i c (ma) base to emitter voltage : v be (v) fig.3 grounded emitter propagation characteristics v ce = 3v measured using pulse current. 25 c ? 25 c ta = 100 c
2sd2114k / 2SD2144S transistors 1 2 5 10 20 50 100 200 500 1000 10 20 50 100 200 500 1000 2000 5000 10000 ta = 25 c measured using pulse current. dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current( ) 3v v ce = 5v 1v 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 v ce = 3v measured using pulse current. dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current( ? ) 25 c ? 25 c ta = 100 c 1 2 2000 1000 200 500 100 20 50 10 5 2 5 10 20 50 100 200 500 1000 ta = 25 c measured using pulse current. 10 25 50 i c /i b = 100 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current( ) collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) 1 2 2000 1000 200 500 100 20 50 10 5 2 5 10 20 50 100 200 5001000 i c / i b = 25 measured using pulse current. fig.7 collector-emitter saturation voltage vs. collector current( ? ) ta = 100 c 25 c ? 25 c base saturation voltage : v be(sat) (mv) collector current : i c (ma) fig.8 base-emitter saturation voltage vs. collector current( ) 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 ta = 25 c pulsed i c /i b = 10 25 50 100 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 base saturation voltage : v be(sat) (mv) collector current : i c (ma) fig.9 base-emitter saturation voltage vs. collector current( ? ) measured using pulse current. l c /l b = 10 25 c 100 c ta =? 25 c emitter current : i e (ma) transition frequency : f t (mhz) fig.10 gain bandwidth product vs. emitter current -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 10000 5000 2000 500 200 1000 100 20 50 10 ta = 25 c v ce = 10v measured using pulse current. 0.1 0.2 0.5 1 2 5 10 20 50 100 collector output capacitance : cob (pf) collector to base voltage : v cb (v) fig.11 collector output capacitance vs. collector-base voltage 100 200 500 1000 10 20 50 2 5 1 ta = 25 c f = 1mhz i e = 0a 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 on resistance : ron ( ? ) base current : i b (ma) fig.12 output-on resistance vs. base current 0.1 0.2 0.5 1 2 5 10 20 50 100 ta=25 c f=1khz vi=100mv( rms) r l =1k ?
2sd2114k / 2SD2144S transistors z ron measurement circuit ron = r l v 0 v 0 v i ? v 0 r l = 1k ? i b output input 1khz 100mv(rms) v i v
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